| 摘要 |
PURPOSE: A method for forming an isolation layer of a semiconductor device is provided to prevent moat by widening an isolation region using oxidation of an amorphous silicon layer. CONSTITUTION: A first trench is formed in a semiconductor substrate(10) by using a pad oxide pattern(12) and a hard mask pattern(14). An amorphous silicon layer is formed on the resultant structure. A spacer is formed at both sidewalls of the first trench. A second trench is formed by patterning the amorphous silicon layer and the substrate. A silicon oxide layer(28) is formed by oxidizing the amorphous silicon layer using O2 plasma oxidation after the spacer is removed. Then, an isolation layer(30) is formed by filling a field oxide layer in the first and second trenches and planarizing using the hard mask pattern as a stop layer.
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