METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to remove scratch on etch profile by forming a polymer on the scratch using N2 gas. CONSTITUTION: A pad oxide layer(22), a pad nitride layer(23) and an anti-reflective coating layer are sequentially stacked on a silicon substrate(21). By first etching the stacked layers using main etch gas added in N2 gas, a field region is exposed and a polymer(26) is formed at sidewalls of the etch profile. A trench is formed by second etching the exposed field region using the pad nitride layer with the polymer. An oxide layer is filled in the trench, and then the remaining pad nitride layer and oxide layer are removed.