METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of preventing encroachment of wet-etchant in a cell region caused by removing an insulating layer of a peripheral region. CONSTITUTION: A plurality of conductive patterns(G1,G2) are formed on a cell region(X-X') and a peripheral region(Y-Y') of a substrate(40). An etch stop layer(44) and an insulating layer(45) are sequentially formed on the resultant structure. Plugs(48) are formed to contact the substrate between the conductive patterns in the cell region. The insulating layer of the peripheral region is partially removed by dry-etching. At this time, the etch stop layer is partially etched. The insulating layer of the peripheral region and the remaining etch stop layer(44') are entirely removed by wet-etching.