| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing semiconductor device by which a thin film transistor can be obtained which is less affected by a coincidence boundary even when the boundary exists in crystal grains of a semiconductor material used in the channel forming region of the transistor. SOLUTION: The thin film transistor T contains a gate electrode 22, a source region 24, a drain region 25, and the channel forming region 26. A silicon film used for forming the channel forming region 26 is composed of nearly single-crystal silicon crystal grains grown from a crystal growth starting point and the lengthwise direction (L direction in the figure) of the region 26 is disposed in a radial direction from the crystal growth starting point. Consequently, the coincidence grain boundary 54 that can be contained in the silicon crystal grains does not traverse the lengthwise direction of the channel forming region 26. COPYRIGHT: (C)2004,JPO&NCIPI |
