| 摘要 |
PURPOSE: A method for forming a dual gate oxide layer of a semiconductor device is provided to restrain the damage of an isolation layer and a substrate by using a nitride pattern. CONSTITUTION: A nitride pattern is formed on an active region of a semiconductor substrate(21). An isolation layer(23) is formed in the exposed substrate. By selectively removing the nitride pattern, a thin gate oxide forming region is defined. The first oxide layer(25) is grown by oxidation processing. The nitride pattern is removed. By oxidation processing of the resultant structure, a thin gate oxide layer(26) and a thick gate oxide layer(27) are simultaneously formed on the substrate.
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