METHOD FOR FORMING PATTERN OF SEMICONDUCTOR DEVICE USING ArF EXPOSURE SOURCE

摘要

PURPOSE: A method for forming a pattern of a semiconductor device using an ArF exposure source is provided to be capable of minimizing the deformation of the pattern. CONSTITUTION: An etch stop layer, an insulating layer and an anti-reflective coating layer are sequentially formed on a substrate with conductive patterns(300). A photoresist pattern with an ArF exposure source is formed on the anti-reflective coating layer(301). An opening part is formed to expose the insulating layer by selectively etching the anti-reflective coating layer at low temperature. The resultant structure moves to a different chamber with relatively high temperature(303). A contact hole is then formed to expose the substrate by etching the insulating layer and the etch stop layer(304).