| 摘要 |
PURPOSE: A word line precharge control circuit of a NAND flash memory is provided to discharge a block word line at a desired time and to prevent the formation of a current path to an unwanted ground. CONSTITUTION: A charge unit charges a block word line to a high voltage according to a precharge signal and a control signal. A discharge unit discharges the block word line according to the control signal. And a pass unit passes the control signal to the ground while discharging the block word line. The pass unit is constituted with a switching device turned on according to the precharge control signal.
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