SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A semiconductor device and a method for manufacturing the same are provided to be capable of reducing contact resistance of a bit line pattern and an etch target. CONSTITUTION: An insulating layer(36b) with an opening part is formed on a substrate(30). A barrier layer(38) is formed on the opening part. A metal film is formed on the barrier layer to fill the opening part. By selectively etching the metal film and the barrier layer, the metal film and the barrier layer is recessed to the first depth on the opening part. By recessing the insulating layer with the second depth, a protrudent contact pad(39) with a desired protrudent height(h) is formed. Then, a bit line pattern(B/L) is formed on the contact pad.