| 摘要 |
PURPOSE: A method for manufacturing a semiconductor memory device and a cell transistor are provided to improve data reading speed by sequentially stacking a metal gate, a ferroelectric film and a control gate on a memory region. CONSTITUTION: A gate dielectric film(28) and a metal gate(30a) are sequentially formed on a memory region(A) of a semiconductor substrate(10). A source/drain region(20) is formed in the substrate. An interlayer dielectric(22) is formed on the resultant structure. A ferroelectric film(32) is connected vertically to the metal gate through the interlayer dielectric. A control gate(34) is formed on the interlayer dielectric to connect the ferroelectric film.
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