GAP-FILL METHOD OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A gap-fill method of a semiconductor device is provided to easily fill the gap between patterns without voids by decreasing the aspect ratio using a polishing assist layer. CONSTITUTION: Patterns(22) with a gap are formed on a semiconductor substrate(21). The first insulating layer(23) is first filled in the gap being bottom up. At this time, a valley is generated corresponding to the aspect ratio. An SOG(Spin On Glass) layer as a polishing assist layer is formed and cured. The SOG layer and the first insulating layer are polished, so that a non-cured SOG layer(24a) is filled in the valley. The second insulating layer is second filled in the gap having low aspect ratio.