| 摘要 |
PURPOSE: A method for manufacturing a phase shift mask is provided to prevent failure of patterns due to charging by forming a conductive layer before coating a photoresist layer. CONSTITUTION: A mask substrate(100) with a light shielding region and a light transmission region is prepared. A phase shifting layer and a light shielding layer are sequentially formed on the mask substrate. A light shielding pattern(104a) and a phase shifting pattern(102a) are formed by patterning the light shielding layer and the phase shifting layer using the first photoresist pattern as a mask. A conductive layer(108) and the second photoresist layer(110) are sequentially formed on the resultant structure. The second photoresist pattern is formed by re-exposing and re-developing the second photoresist layer and the conductive layer. The exposed light shielding pattern is peeled by using the second photoresist pattern. Then, the second photoresist pattern is removed.
|
