| 摘要 |
PURPOSE: A method for forming a fine pattern with a dual damascene pattern is provided to improve the property of a metal line by removing polymers in the dual damascene pattern. CONSTITUTION: An interlayer dielectric is formed on a semiconductor substrate. A via hole is formed by patterning the interlayer dielectric. An etch stop layer(300) is formed at the sidewalls of the via hole. An anti-reflective coating layer(8) is partially filled in the via hole. A trench is formed by selectively etching the interlayer dielectric. By removing the anti-reflective coating layer, a dual damascene pattern is then formed. A copper film is filled in the dual damascene pattern.
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