| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a thin-film transistor which produces no residue of a gettering sink, when removing the gettering sink by an etchant of alkali solution, having high selection ratio of a barrier film that functions as an etching stopper and the gettering sink. SOLUTION: Concentration of nitrogen in a semiconductor film which is to become a gettering sink is set to be 1×10<SP>18</SP>atoms/cm<SP>3</SP>or lower, its oxygen concentration is set to 8×10<SP>19</SP>atoms/cm<SP>3</SP>, and its rare gas element concentration is set to 1×10<SP>20</SP>atoms/cm<SP>3</SP>. In order to attain the impurity concentration, combustible gas is used and oxygen, which is an impurity in a chamber is burned and exhausted, and reduced. COPYRIGHT: (C)2004,JPO&NCIPI
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