PHOTODIODE, OPTO-ELECTRONIC INTEGRATED CIRCUIT DEVICE HAVING THE SAME, AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A photodiode, an opto-electronic integrated circuit device having the same, and a manufacturing method thereof are provided to obtain a silicon substrate capable of detecting short wavelength light by forming an amorphous silicon layer on a light receiving surface of the silicon substrate without using an additional compound semiconductor substrate. CONSTITUTION: A silicon substrate(21) is defined with the first and second region. The first conductive type impurity region(27) is formed at the first region. The second conductive type impurity region(29) is formed at the second region. The second region is spaced apart from the first region. An amorphous silicon layer(30) is formed by carrying out a chemical etching process on the second conductive type impurity region.