| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of preventing widening of upper CD(Critical Dimension) when forming a via hole. CONSTITUTION: The first insulating layer(32) with the first opening part is formed on a conductive layer(31). A plug(37) is filled in the first opening part. At this time, a void(38) is formed on the plug. The second insulating layer(40) and a hard mask are sequentially formed on the resultant structure. A hard mask pattern(41) is formed by selectively etching the hard mask using a photoresist pattern(42). A via hole(43) is then formed to expose the plug without the void by etching the second insulating layer.
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