| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to reduce leakage current by using an improved insulating layer as a gate oxide layer of an MOS transistor and a dielectric film of an MOS capacitor. CONSTITUTION: A semiconductor substrate(10) with an isolation layer(12) is prepared. An insulating layer(14) with high dielectric constant used as a gate insulating layer of MOS transistor and a dielectric film of MOS capacitor is formed on the resultant structure. A first gate electrode(16) for the MOS transistor and a second gate electrode(18) for the MOS capacitor are formed by depositing a conductive layer on the insulating layer and patterning. The insulating layer is one selected from group consisting of HfSiO2, HfSiON, HfON, HfO2, Al2O3 and AlON layer.
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