| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to restrain short channel effect by decreasing the depth of an LDD(Lightly Doped Drain) region and a heavily doped region. CONSTITUTION: A semiconductor substrate(102) with a gate electrode(110) is prepared. An LDD oxide layer(112) is formed on the resultant structure. An LDD region(114) is formed in the substrate. An LDD spacer(118) is formed at both sidewalls of the gate electrode. The LDD oxide layer on the gate electrode and the substrate is selectively removed. An epitaxial layer(120) is grown on the gate electrode and the substrate by SEG(Selective Epitaxial Growth). An ion-implanted layer(122) is formed in the epitaxial layer. A heavily doped region(124) is then formed by diffusing dopants in the ion-implanted layer into the substrate using annealing.
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