SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device having an MISFET type field effect transistor provided with a gate insulation film composed of a metallic acid nitride film or a metal-nitride silicate which improves insulation and is capable of suppressing crystallization although containing a high concentration of metal. SOLUTION: In the semiconductor device provided with the MISFET including a substrate (1), a source/drain region (4) formed on the substrate and a gate electrode (7) formed on the substrate via a gate insulation film (6), the gate insulation film is composed of the metallic acid nitride film containing a metal-oxygen-nitrogen bonding chain and the metal-nitride silicate film containing at least one of a metal-oxygen-nitrogen bonding chain and a silicon-oxygen-nitrogen bonding chain. COPYRIGHT: (C)2004,JPO&NCIPI