| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method capable of improving the separating characteristic of separation of fine trench elements. SOLUTION: A silicon oxide film having uneven film thickness is stacked on trenches in an element separation area formed on a silicon substrate by etching so that only corner parts on the bottoms of the trenches are exposed. The silicon substrate is selectively etched from the trench corner parts of the trenches from which the silicon substrate is exposed to increase the volume of the trenches. COPYRIGHT: (C)2004,JPO&NCIPI
|
