| 摘要 |
PURPOSE: A method for manufacturing a semiconductor memory device is provided to reduce junction leakage and GIDL(Gate Induced Drain Leakage current) by rapidly shielding electric field in a drain region. CONSTITUTION: A source/drain etch region is formed by selectively etching an isolation region(2) of a substrate. The first epitaxial layer(7) is grown on the etch region by SEG(Selective Epitaxial Growth). The first, second and third channel edge etching region are sequentially formed by selectively etching the first epitaxial layer. The first oxide layer(9), the metal film(11) and the second oxide layer(13) are formed on the first, second and third channel edge etching region, respectively. The second epitaxial layer is grown on the channel edge region. A gate is formed on the channel region and a source/drain region is formed in the first and second epitaxial layer.
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