| 摘要 |
PURPOSE: A volatile semiconductor memory device is provided to prevent data stored in each cell from being lost, by performing a refresh function compensating the reduction of cell charges in each cell according to a storage node potential. CONSTITUTION: A plurality of bit lines(BL0-BLn) are arranged in a column direction. A plurality of word lines(WL0-WLn) are arranged in a row direction. A plurality of switching transistors(CT) have gate ports combined in correspondence to the plurality of word lines, and drain ports combined in correspondence to the plurality of bit lines, and source ports combined in correspondence to a plurality of storage nodes. A plurality of capacitors(C) are combined between the plurality of storage nodes and a ground. And a plurality of refresh circuit parts(100) are combined between the plurality of storage nodes and an internal power supply voltage part, and compensate charge loss of the plurality of capacitors according to a potential level of the plurality of storage nodes.
|
