| 摘要 |
PURPOSE: A method for forming a storage node electrode of a capacitor is provided to achieve sufficient bottom CD(Critical Dimension) of a storage node contact by forming a silicide layer on the bottom of the storage node contact. CONSTITUTION: A semiconductor substrate(10) with a conductive plug(13) is prepared. A silicon nitride layer(14) and a cap oxide layer(15) are sequentially formed on the resultant structure. A storage node contact(16) is formed to expose the plug by selectively etching the cap oxide layer using the silicon nitride layer as an etch stop layer. A metal film is formed on the storage node contact. A metal silicide layer(17a) is formed to contact the plug by annealing. Then, a polysilicon layer(18) and an HSG(Hemispherical Silicon Grain)(18a) are sequentially formed on the resultant structure.
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