FORMING METHOD OF OXYNITRIDE LAYER

摘要

PURPOSE: A forming method of an oxynitride layer is provided to minimize the variation of threshold voltage due to trap charge by nitridation processing. CONSTITUTION: A silicon substrate is loaded in an oxidation furnace. A pure silicon oxide layer is grown on the silicon substrate by flowing oxygen-containing source gas. The remaining oxygen-containing source gas is exhausted by flowing inert gas to the oxygen furnace. After rising the temperature in the oxygen furnace and stabilizing the temperature, an oxynitride layer is formed by nitridation processing using nitrogen-containing source gas. The oxygen furnace is rapidly cooled while flowing inert gas.