| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a forming method of a resist pattern and a manufacturing method of a semiconductor device using the former method wherein a lens of an aligner is prevented from being contaminated by a degassed component produced from a resist film upon its exposure to light. <P>SOLUTION: The forming method of a resist pattern is employed, which comprises the processes of forming a resist film 2 containing silicon on a workpiece substrate 1, forming a protective film 3 on the resist film 2 for suppressing release of silicon from the resist film 2, and forming a latent image of a predetermined resist pattern by irradiating the resist film 2 with exposing light 5 via the protective film 3. The protective film 3 can be formed with a polymer having a fluorine-containing aliphatic ring structure. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
