发明名称 CMP-SUPPORTED LIFTOFF FINE PATTERNING
摘要 PROBLEM TO BE SOLVED: To provide a CMP(chemical mechanical polish)-supported liftoff fine patterning which is used for a vacuum-deposited thin film for a micro electronic device and a nano-structure. SOLUTION: The micro electronic device is formed of a first film covering a substrate, a first polishing-resistant layer covering the first film, a second film covering the first polishing-resistant layer, and a junction which is generally vertical between the first and second films and where the first and second polishing-resistant layers contain diamond-like carbons. The first film contains an electrical resistance material, whereas the second film contains a low resistance, conductive material. The first film is an electric resistor realized as a magnetic reading sensor. The electrical resistance material reacts with a magnetic field at high sensitivity. The device includes a generally vertical junction and a dielectric film adjacent to the electrical resistance material. COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004186673(A) 申请公布日期 2004.07.02
申请号 JP20030367987 申请日期 2003.10.28
申请人 INTERNATL BUSINESS MACH CORP <IBM> 发明人 CYRILLE MARIE-CLAIRE;DILL FREDERICK H;HWANG CHERNGYE;LI JUI-LUNG
分类号 G11B5/39;G11B5/31;H01L21/304;H01L43/08;(IPC1-7):H01L43/08 主分类号 G11B5/39
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