| 摘要 |
PURPOSE: A method for forming a landing plug of a semiconductor device is provided to minimize dishing by using spin RPM(Revolution Per Minute) instead of CMP or etch-back. CONSTITUTION: A gate(35) and a hard mask(37) are sequentially formed on a semiconductor substrate(31). A spacer(39) is formed at sidewalls of the hard mask and the gate. A landing plug contact hole is formed by forming an interlayer dielectric(41) on the resultant structure and selectively etching. A polysilicon layer is formed on the resultant structure including the landing plug contact hole. A landing plug(43a) is formed by selectively removing the polysilicon layer and the interlayer dielectric using spin RPM.
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