发明名称 METHOD FOR MANUFACTURING TaON CAPACITOR
摘要 PURPOSE: A method for manufacturing a capacitor is provided to increase capacitance and to shorten annealing time by forming a TaON film as a dielectric film using PEALD(Plasma Enhanced Atomic Layer Deposition). CONSTITUTION: A lower electrode(31a) is formed on a semiconductor substrate(11) and treated by NH3 plasma treatment. A TaON film(35) as a dielectric film is formed on the lower electrode by PEALD. An upper electrode(39) is then formed on the TaON film.
申请公布号 KR20040057633(A) 申请公布日期 2004.07.02
申请号 KR20020084400 申请日期 2002.12.26
申请人 HYNIX SEMICONDUCTOR INC. 发明人 AHN, BYEONG GWON;LEE, GEUM BEOM
分类号 H01L27/108;(IPC1-7):H01L27/108 主分类号 H01L27/108
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