| 摘要 |
PROBLEM TO BE SOLVED: To provide a tunnel magneto-resistance effect head having the flat temperature gradient of a resistance value and capable of obtaining a stable MR changing rate in a wide temperature area. SOLUTION: This tunnel magneto-resistance effect head is provided with a free layer, a pindiode layer, and a tunnel barrier layer held between the free layer and the pindiode layer. The temperature coefficient TC of a resistance value is -0.02%/°C<TC<0. COPYRIGHT: (C)2004,JPO&NCIPI
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