| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device with a high-voltage transistor is provided to apply back bias by tuning the dosage for forming wells and for adjusting threshold voltage. CONSTITUTION: A silicon substrate(100) with a desired lower structure is prepared. A high-voltage N-well mask with a logic block is formed on the substrate. A P-well is defined by photo-masking. An N-well is formed in the substrate by using the high-voltage N-well mask with the logic block. At this time, a deep well(114) is simultaneously formed in the logic block.
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