| 摘要 |
PURPOSE: A method for forming a silicide layer of a semiconductor device is provided to prevent junction leakage by improving the uniformity of interface between CoSi2 and Si. CONSTITUTION: A gate electrode(13) with an insulating spacer(14) is formed on a silicon substrate(11). A source/drain region(15) is formed in the substrate. Titanium ions are implanted into the gate electrode and the source/drain region. A metal film(16) is formed on the gate electrode and the source/drain region. By annealing the resultant structure, a silicide layer(16a) is formed on the gate electrode and the source/drain region.
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