METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING ArF EXPOSURE SOURCE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to prevent the deformation of a photoresist pattern by using an advanced ArF exposure source. CONSTITUTION: An anti-reflective coating layer is coated on an etch object layer. An ArF photoresist pattern(33b) is formed on the anti-reflective coating layer. An anti-reflective coating pattern(32) is formed by etching the anti-reflective coating layer using mixed gases of Cl2/Ar/He and the photoresist pattern as a mask. A conductive pattern(31a) is then formed by etching the etch object layer using the ArF photoresist pattern.