| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element which is high in luminance, free from the problem about the fact that a surface electrode is separated off by dicing or wire bonding, etc. and has a low forward operating voltage, and to provide a method for manufacturing the same. <P>SOLUTION: This semiconductor light emitting element includes a light emitting layer made of at least an active layer 3 held between a first conductivity type clad layer 2 and a second conductivity type clad layer 4, a transparent conductive layer 7 made of a metal oxide, and the surface electrode 9 formed on a first conductivity type substrate 1 formed with a rear surface electrode 10. At least one recess 13 is formed on the light emitting section layer. At least one through hole 11 is formed at the same position as the recess 13 of the light emitting layer through the transparent conductive layer 7. The surface electrode 9 is brought into contact with the inner surfaces of the through hole 11 of the transparent conductive layer 7 and the recess 13 of the light emitting layer. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
