发明名称 PLASMA TREATING METHOD AND PLASMA TREATING APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To improve the accuracy of a judgment on the state of operation of an apparatus and the state of a treatment of an object to be treated. <P>SOLUTION: An emission spectrum of light which is emitted from plasma during a plasma treatment for a wafer is obtained by an optical measuring instrument 120 as optical data. Quantitative data of each emission type is found from the obtained optical data by using reference data of each emission type from a database 206 which stores emission spectra of the several types of emission as reference data. Then quantitative data of each emission type is monitored and the state of operation of the plasma treating apparatus and the state of treatment of the wafer is judged according to the change in quantitative data of each type of emission. In this way, the state of operation of the plasma treating apparatus and the state of treatment of the wafer can be judged according to the emission spectrum of plasma which is formed of a wide range of wavelength bands. <P>COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004186539(A) 申请公布日期 2004.07.02
申请号 JP20020353452 申请日期 2002.12.05
申请人 TOKYO ELECTRON LTD 发明人 O TAKESHI;MIMURA YUICHI
分类号 H05H1/00;B01J19/08;B01J19/12;G01N21/73;H01J37/32;H01L21/00;H01L21/3065 主分类号 H05H1/00
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