| 摘要 |
PROBLEM TO BE SOLVED: To provide a boron nitride film with a low specific dielectric constant and an excellent metal spread preventing function. SOLUTION: A high frequency antenna 7 and a high frequency power supply 9 apply plasma processing to ammonium gas 11 mainly introduced to a film forming chamber 2 to generate plasma 10 in the film forming chamber 2, and to react diborane gas introduced to the film forming chamber 2 with the plasma-processed ammonium gas, and controlling the temperature of the board 6 forms the boron nitride film 15 having a low specific dielectric constant and an excellent metal spread preventing function onto the board 6. COPYRIGHT: (C)2004,JPO&NCIPI
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