发明名称 SEMICONDUCTOR LIGHT EMITTING DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device for outputting light of two wavelengths stabilized in the difference of frequencies. SOLUTION: A current injection region 102 on an n-type InP substrate 101 is provided with a first laser active layer 103 and a second laser active layer 104 while a first current constriction layer 107 and a second lamp bulb constriction layer 108 are equipped around the current injection region 102. Further, the rear surface of the semiconductor substrate 101 is provided with an n-type lower electrode 111 and the current injection region 102 is provided with a first upper electrode 109 on the upper part of the same, while a first p-type contact layer 105 and an n-type contact layer 106 are arranged between the first laser active layer 103 and the second laser active layer 104, both of which are electrically contacted with the second upper electrode 110. The light of two wavelengths stabilized in the difference of frequencies is outputted by such a constitution. COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004186301(A) 申请公布日期 2004.07.02
申请号 JP20020349695 申请日期 2002.12.02
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 YOSHII SHIGEO;OTSUKA NOBUYUKI;MIZUNO KOICHI;SUZUKI CHIYOUJITSURIYO
分类号 H01S5/22;H01S5/042;H01S5/12;H01S5/227;(IPC1-7):H01S5/22 主分类号 H01S5/22
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