| 摘要 |
PROBLEM TO BE SOLVED: To provide a small size silicon oxide film forming apparatus using the low temperature CVD method. SOLUTION: A vacuum vessel 1 is separated into a radical generating chamber 3 and a film forming chamber 4 with a separation wall 2. A glass substrate 13 placed on a supporting board 12 arranged within the film forming chamber 4 is heated up to the predetermined temperature with a heating mechanism provided to the supporting board 12. The H<SB>2</SB>O gas supplied to the radical generating chamber 3 is decomposed into the O radical, OH radical and H radical by an ultraviolet light source 6. The gas including these radicals and the SiH<SB>4</SB>gas are supplied to the film forming chamber 4 and a silicon oxide film is formed on the glass substrate 13 with chemical reaction. In this case, the silicon oxide film formed on the glass substrate 13 is reformed with the H radical. Moreover, since the radical generating chamber 3 and film forming chamber 4 are integrated, the apparatus as a whole can be reduced in size. COPYRIGHT: (C)2004,JPO&NCIPI
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