| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element which is high in luminance, free from the problem about the fact that a surface electrode is separated off by dicing or wire bonding, etc. and has a low forward operating voltage, and to provide a method for manufacturing the same. <P>SOLUTION: This semiconductor light emitting element includes a light emitting layer made of at least an active layer 3 held between a first conductivity type clad layer 2 and a second conductivity type clad layer 4, a transparent conductive layer 7 made of a metal oxide, and the surface electrode 9 formed on a first conductivity type substrate 1 formed with a rear surface electrode 10. At least, one opening 11 is formed through the transparent conductive layer 7. The surface electrode 9 is brought into contact with a lower layer of the transparent conductive layer 7 via the opening 11. A part on the opening 11 of the transparent conductive layer 7 in the surface electrode 9 is thicker than a part on the transparent conductive layer 7. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
