| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a III-V group compound semiconductor solar cell in which Ag is used in place of Au as a principal material of an electrode on a light receiving plane side, and an electrode area is small with the same cell size as in the prior art, and also an output is large at a low cost with a high reliability. <P>SOLUTION: In the III-V group compound semiconductor solar cell, the electrode on the light receiving plane side formed on a contact layer 12 is an electrode in which Ag is the principal material and which is clad with a metallized protection film, and the contact layer which is not formed with the electrode on the light receiving plane side is removed. Further, a method for manufacturing the III-V group compound semiconductor solar cell comprises the steps of: forming an electrode 13 on the light receiving plane side clad with the metallized protection film on the contact layer 12 with Ag as the principal material; and using the electrode on the light receiving plane side as a protection mask to remove the contact layer which is not formed with the electrode 13 on the light receiving plane side. <P>COPYRIGHT: (C)2004,JPO&NCIPI</p> |
