METHOD OF MANUFACTURING METAL THIN FILM FOR OHMIC CONTACT FOR EMBODIMENT OF LIGHT EMITTING DIODE AND LASER DIODE

摘要

PURPOSE: A method of manufacturing a metal thin film for ohmic contact for the embodiment of an LED(Light Emitting Diode) and a laser diode is provided to accelerate the mass-production of GaN semiconductor and improve the yield of a device by using an ohmic electrode process. CONSTITUTION: An N type GaN semiconductor layer(20) for an N type ohmic contact is formed on an oxide aluminium substrate(10). A three-layered metal thin film structure is formed on the N type GaN semiconductor layer. The three-layered metal thin film structure is completed by sequentially forming a V, Ti, and Au layer(30,40,50) on the N type GaN semiconductor layer as a contact metal layer, an intermediate layer, and a capping layer, respectively.