| 摘要 |
PURPOSE: A power MOS transistor is provided to omit the back grind and back metallization process by forming a drain pad on a semiconductor substrate. CONSTITUTION: An epitaxial layer(22) is formed on a semiconductor substrate(21). An n-type body region(24) is formed in the epitaxial layer. An n-type body plus region(25) is formed in the epitaxial layer spaced apart from the body region. A p-type source region(23) is formed on the n-type body region. A source(27) is connected to the p-type source region. The first and the second drain pad region(28a,28b) are formed on the epitaxial layer spaced apart from the n-type body region, so that the current path is faced to the surface direction.
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