| 摘要 |
PURPOSE: A method for forming a capacitor of a semiconductor device is provided to improve process margin and reliability by improving the surface roughness of a storage node electrode. CONSTITUTION: An interlayer dielectric(22) is formed on a substrate. A pad oxide layer(24), an etch stop layer(26) and an oxide layer are sequentially formed on the interlayer dielectric. A contact hole is formed by patterning the oxide layer, the etch stop layer, the pad oxide layer and the interlayer dielectric. A polysilicon layer is filled in the contact hole. A storage node electrode pattern(30) is formed by etching the polysilicon layer. A nitride spacer(34) is formed at sidewalls of the storage node electrode pattern to prevent oxidation. An oxide layer(36) is formed on the storage node electrode pattern. The nitride spacer is removed. Then, an upper electrode is formed.
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