| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device with a dual gate oxide layer is provided to simplify the process and to prevent dose loss by using two-step gate oxidation processes. CONSTITUTION: The first gate oxide layer is formed on a substrate(1) by first gate oxidation processing. A polysilicon pattern(3a) is formed to expose a desired portion of the first gate oxide layer. The second gate oxide layer is formed on the polysilicon pattern and the exposed first gate oxide layer by second gate oxidation processing. By CMP of the second gate oxide layer and the polysilicon pattern, a dual gate oxide layer(10) with different thickness is formed. Then, a gate conductive layer(11) is formed on the dual gate oxide layer and the polysilicon pattern.
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