| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device which can obtain a high Q characteristic without being influenced by the conductivity of a semiconductor substrate like a silicon substrate and can be intended to reduce in size and thickness, and a method for manufacturing the semiconductor device. <P>SOLUTION: There are provided a semiconductor substrate 11, a semiconductor chip 13 mounted on the semiconductor substrate 11, an electric insulation resin layer 15 formed on the semiconductor substrate 11 to cover the semiconductor chip 13, a conductive metal layer 17 formed in the electric insulation resin layer 15 to be electrically connected with an electrode of the semiconductor chip 13, an inductor 20 formed upon forming an additional electrode 21 formed in the conductive metal layer 17, and a buffer layer 23 formed in the conductive metal layer 17 to cover the inductor 20. <P>COPYRIGHT: (C)2004,JPO&NCIPI</p> |
