| 摘要 |
PROBLEM TO BE SOLVED: To provide a PIN photo diode used for a photodetecting device for optical communications, by which an increase of an electrostatic capacity of the device is inhibited and high-speed operating characteristics are obtained. SOLUTION: The PIN photo diode further includes a gate electrode construction comprising a gate insulating layer 28 and a gate electrode pad 29 to prevent excessive depletion of a junction layer caused when a negative voltage is applied to an electrode 26 brought into contact with the junction layer 25. The increase of the electrostatic capacity of the device is inhibited by adjusting a depletion degree in a side face direction of the junction layer using gate power. COPYRIGHT: (C)2004,JPO&NCIPI
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