发明名称 LASER REDUCED IN INFLUENCE OF PARASITIC ETALON
摘要 PROBLEM TO BE SOLVED: To improve laser performance by bringing the spectral cycles of a plurality of etalons disposed in the laser cavity into practical coincidence. SOLUTION: This is to provide discrete tunable external cavity semiconductor laser that has grid fixed etalon within the laser cavity, wherein a free spectral region (FSR) of the grid fixed etalon is an integral multiple of the laser cavity's FSR, and is an integral multiple of the chip etalon's FSR. Further, there is provided fixed wavelength external cavity semiconductor laser in which the chip etalon's FSR is an integral multiple of the laser cavity's FSR, mode controlled etalon's FSR is inserted into the laser cavity, and the mode controlled etalon's FSR is an integral multiple of the chip etalon's FSR. Furthermore, there are provided tunable external cavity semiconductor laser in which the chip etalon's FSR is an integral multiple of the laser cavity's FSR, and fixed wavelength external cavity semiconductor laser in which the chip etalon's FSR is an integral multiple of the laser cavity's FSR. COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004186669(A) 申请公布日期 2004.07.02
申请号 JP20030308810 申请日期 2003.09.01
申请人 PICARRO INC 发明人 KOULIKOV SERGUEI;PALDUS BARBARA A;PAKULSKI GRZEGORZ;RELLA CHRIS W;XIE JINCHUN
分类号 H01S3/106;H01S5/0687;H01S5/14;(IPC1-7):H01S5/14;H01S5/068 主分类号 H01S3/106
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