MANUFACTURING METHOD OF SILICON EPITAXIAL WAFER

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of silicon epitaxial wafer, which hardly forms minute unevenness on the surface of a silicon epitaxial layer and can prevent a haze. SOLUTION: A susceptor 20 which has a spot facing 21 which is composed of an upper part 21a for holding the fringe of a semiconductor substrate W and a bottom part 21b formed in the center of the spot facing 21 lower than the upper part 21a, and in which the bottom part 21b has holes 22 which is opened during vapor deposition, is used. The semiconductor substrate W is placed so that a CVD oxide film 1 formed on the substrate W faces the holes 22 to carry out vapor deposition of a silicon epitaxial layer on the substrate W. COPYRIGHT: (C)2004,JPO&NCIPI