MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device which is excellent in electrical characteristics and includes silicide processing of good controllability. SOLUTION: The manufacturing method of a semiconductor device comprises a process (a) for heating a silicon substrate with an MOS transistor structure at 320 to 480°inside a treatment chamber and a process (b) for depositing Co whereto Ti of 0.3 to 2.0 at% is added on the heated silicon substrate. It is further preferable to set the heating temperature at 350 to 400°C and the Ti doping amount at 0.5 to 1.75 at%. COPYRIGHT: (C)2004,JPO&NCIPI