| 摘要 |
PROBLEM TO BE SOLVED: To obtain an etching stopper and a hard mask both of which are favorably used at the time of dry etching an interlayer insulating film composed of SiO<SB>2</SB>, a fluorine-doped SiO<SB>2</SB>, an organic/inorganic SOG (spin-on glass) material, a low-k film, etc., or at the time of dry etching a barrier film such as of SiN, SiC, SiCN, etc. SOLUTION: An insulating film is composed of a film selected from among SiO<SB>2</SB>(silicon oxide) insulating film, an FSG (fluorine-doped silicon oxide) insulating film, an OSG (organosilicate glass) insulating film, a SiOC (carbon-doped silicon oxide) insulating film, an MSQ (methyl silsesquioxane) insulating film, an HSQ (hydrogen silsesquioxane) insulating film, the SOG (spin-on glass) insulating film, a polyorganosiloxane insulating film, the low-k (low dielectric) interlayer insulating film, and an organic polymer low-dielectric interlayer insulating film and an organic silicon polymer having a dry etching selection ratio. The insulating film has relative permittivity of≤4. COPYRIGHT: (C)2004,JPO&NCIPI
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