| 摘要 |
PROBLEM TO BE SOLVED: To provide a low dielectric insulating film which enables formation of an insulating film of a high strength and a low dielectric constant, its manufacturing method, and a semiconductor device using the low dielectric constant insulating film. SOLUTION: The manufacturing method of the low dielectric insulating film comprises a siloxane resin film formation process for forming a siloxane resin film by applying a low dielectric insulating film formation material containing a siloxane resin on a substrate, a surface treatment process for making the surface of the siloxane resin film hydrophilic by means of surface treatment liquid and a baking process for baking the siloxane resin film which is subjected to surface treatment. In the manufacturing method, an embodiment wherein the surface treatment liquid is selected from an organic solvent with a hydroxyl group and water solution of pH 1 to 10, an embodiment wherein insolubilization treatment is carried out for insolubilizing the surface treatment liquid by heat-treating the siloxane resin film before the surface treatment process, or the like are preferable. COPYRIGHT: (C)2004,JPO&NCIPI
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