| 摘要 |
PURPOSE: A method for manufacturing a gate electrode of a semiconductor device is provided to perform deep submicron process without using a sophisticated photo etching apparatus by using a nitride spacer. CONSTITUTION: An oxide pattern is formed on a semiconductor substrate. A nitride spacer is formed at sidewalls of the oxide pattern. A gate oxide layer and a gate electrode(21) with line-width of deep submicron are formed on the exposed substrate. The oxide pattern is removed, and then a source/drain region(19) is formed in the substrate. The nitride spacer is removed, and then an LDD(Lightly Doped Drain) region(20) is formed on the substrate.
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